Figure 7

Cross-sectional SEM micrograph of a coalesced PE GaN epilayer deposited on a masked GaN/AlN/3C-SiC/Si(111) substrate.


(click for full image)

top        text     Figure 6     Figure 8        endnotes

last updated Wednesday, December 8, 2004 3:07:03 PM.

© 2001-2004 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research