Figure 14a

Al₁₀Ga₉₀N film grown via pendeo-epitaxy on unmasked GaN seed posts on a 6H-SiC substrate. No misregistry above the GaN seed posts is observable.

Figure 14b

TEM micrograph of the sample in (a). A significant reduction in density of threading dislocations in the pendeo-epitaxial Al₁₀Ga₉₀N compare to the GaN seed post is obvious.

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