Figures

Figure 1

CL spectra of AlN:Eu processed as follows: (a) no O2 and no heat treatment; (b) no O2 but heated to 923 K; (c) grown under 1.6% O2; (d) grown under 3.8% O2; and (e) grown under 20% O2.


Figure 2

Photograph of CL emission from AlN:Eu3+ samples doped with varying amounts of oxygen.


Figure 3

The integrated CL(x) and PL(?) intensities from AlN:Eu3+ samples versus oxygen content of the plasma, normalized to the emission intensity from an oxygen-free sample.


Figure 4

PL emission spectrum from AlN:Eu3+ grown under 20% oxygen.


Figure 5

Semilogarithmic PL decays from AlN:Eu3+ samples doped with varying amounts of oxygen. The slow component of each decay has a rate constant of (0.4 ms)-1. The decays have been vertically offset for clarity.


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last updated Tuesday, August 28, 2001 7:01:34 PM.

© 2001 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research