Visible Luminescent Activation of Amorphous AlN:Eu Thin-Film Phosphors with Oxygen
Meghan L. Caldwell, P. G. Van Patten
Department of Chemistry and Biochemistry, Ohio University
Martin E. Kordesch
Condensed Matter and Surface Science Program, Department of Physics and Astronomy, Ohio University
Hugh H Richardson
Department of Chemistry and Biochemistry, Ohio University
This article was received on Friday, June 15, 2001 and
accepted on Tuesday, August 28, 2001. Abstract
We
have investigated the effects of oxygen incorporation on cathodoluminescence
(CL) and photoluminescence (PL) from sputtered amorphous films of
AlN:Eu3+. Ordinarily, these materials must be activated at elevated
temperatures (~1000K) before appreciable luminescence can be observed. We have
shown that oxygen doping is an effective alternative to thermal activation.
Studies of CL intensity versus oxygen contamination indicate that luminescence
turns on if the oxygen content of the sputtering plasma exceeds a few percent.
Significantly, oxygen appears to have a greater impact (>600-fold) on
luminescence than does thermal activation (100-fold). The oxygen dependence of
PL intensity varies slightly from that of CL intensity. A possible explanation
for this observation is proposed. The results suggest that low temperature
alternatives to the customary thermal activation process may be available.
Such alternatives would eliminate materials constraints and would permit the
facile integration of plastic components or substrates with rare-earth-doped
III-N luminescent devices.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 6, 13(2001).
last updated Tuesday, August 28, 2001 7:00:30 PM.© 2001 The Materials Research Society
