On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation


F.Shahedipour, B.W.Wessels
Department of Materials Science and Engineering and Materials Research Center

This article was received on Tuesday, June 19, 2001 and accepted on Friday, August 17, 2001.

Abstract

The decay dynamics of the 2.8 eV emission band in p-type GaN was investigated using time-resolved photoluminescence spectroscopy. The luminescence intensity decays non-exponentially. The decay dynamics were consistent with donor-acceptor pair recombination for a random distribution of pair distances. Calculations using the Thomas-Hopfield model indicated that recombination involves deep donors and shallow acceptors.

Outline

  • Introduction
  • Experimental Results and Discussion
  • Conclusion
  • Acknowledgments
  • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 6, 12(2001).

    last updated Friday, August 17, 2001 12:16:35 PM.

    © 2001 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research