Figures

Figure 1

Basic structure of InGaN surfaces: (a) (000), surface is terminated by one monolayer of indium atoms. (b) (0001), surface is terminated with two layers of metal atoms, with the top layer being entirely In, and second layer containing a mixture of In and Ga.

Figure 2

STM image of an InGaN(0001) surface with relatively high In-content, acquired with sample bias voltage of +0.8 V and tunneling current of 0.075 nA. Some local background subtraction has been applied to the image, to permit viewing of the features on both terraces. The grey scale range on a given terrace is 1.1 Å. Sample was grown at 600°C with Ga and In fluxes of 8.3x10¹³ and 1.3x10¹⁴ cm^-2s^-1 respectively.

Figure 3

STM image of InGaN(0001) surface, from the same film as pictured in Figure 2. Image acquired with sample bias voltage of -0.1 V and tunneling current of 0.075 nA. The grey scale range is 0.35 Å.

Figure 4

STM image of InGaN(000) surface from a sample with 5% indium incorporation in the bulk. Sample bias voltage is -1.0 V and tunneling current is 0.15 nA. The grey scale range is 0.6 Å. Symbols A-E denote different types of atoms, as described in the text.

Figure 5

(a) Indium incorporation dependence on (In+Ga) flux for (0001) polarity InGaN. The In/(In+Ga) flux ratio was kept constant at 33%. (b) Theoretical curves based on Eqs. (3) and (4) in the text.

Figure 6

(a) Indium incorporation dependence on (In+Ga) flux for (000) polarity InGaN. The In/(In+Ga) flux ratio was kept constant at 36%. (b) Theoretical curves based on Eqs. (3) and (4) in the text.

Figure 7

Schematic view of the InGaN(0001) surface layers: layer 1, indium adatoms residing on top of the indium adlayer; layer 2, indium adlayer; layer 3, metal (In or Ga) atoms; layers 4 and 6, nitrogen atoms; layer 5, metal atoms.

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