MIJ-NSR Vol. 6, Art. 11, Huajie Chen et al.

Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory

This article was received on Tuesday, June 5, 2001 and accepted on Tuesday, June 26, 2001.

Abstract

InGaN alloys with (0001) or (000

) polarities are grown by plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy images, interpreted using first-principles theoretical calculations, show that there is strong indium surface segregation on InGaN for both (0001) and (000

) polarities. Evidence for the existence and stability of a structure containing two adlayers of indium on the In-rich InGaN(0001) surface is presented. The dependence on growth temperature and group III/V ratio of indium incorporation in InGaN is reported, and a model based on indium surface segregation is proposed to explain the observations.

Outline

Introduction

Experiment

Results and Discussion

Surface Structures

Incorporation Kinetics

Conclusion

Acknowledgments

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 6, 11(2001).

last updated Friday, August 15, 2003 11:14:53 AM.