Figures

Figure 1

A schematic, cross-sectional diagram showing a GaN/Al₂O₃ layer with a small hole used for thickness measurements.

Figure 2

Profiles of mobility µ, carrier concentration n, O concentration [O], and Si concentration [Si] in a GaN/Al₂O₃ layer grown by HVPE. The interface is at depth = 0.

(click for full image)

Figure 3

Temperature dependences of the (apparent) mobility µ_as-grown of an as-grown GaN/Al₂O₃ layer, about 6-µm thick, and the (apparent) mobility µ_etched of the same layer etched to a thickness of 0.75 µm. Also shown are µ_D-H, which is the average mobility of the top 5 µm, as determined by differential-Hall measurements, and µ_B-I, which is the average mobility of the "bulk" region (also approximately the top 5 µm), calculated by correcting µ_as-grown for the degenerate interface layer.

(click for full image)

Figure 4

Temperature dependences of the (apparent) carrier concentration n_as-grown of an as-grown GaN/Al₂O₃ layer, about 6-µm thick, and the (apparent) carrier concentration n_etched of the same layer etched to a thickness of 0.75 µm. Also shown are n_D-H, which is the average carrier concentration of the top 5 µm, as determined by differential-Hall measurements, and n_B-I, which is the average carrier concentration of the "bulk" region (also approximately the top 5 µm), calculated by correcting µ_as-grown for the degenerate interface layer.

(click for full image)

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© 2001 The Materials Research Society