Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
E.M.Goldys, M. Godlewski
Division of Information and Communication Sciences,
Macquarie University
T. Paskova, G. Pozina, B. Monemar
Department of Physics and Measurement Technology, Linköping University
This article was received on Friday, November 10, 2000 and
accepted on Thursday, January 18, 2001. Abstract
We
report characterization of the red emission band in hydride vapor phase
epitaxial GaN using cathodoluminescence spectroscopy and imaging and
time-resolved photoluminescence. The observed properties of the emission
are consistent with recombination of excitons bound at close
donor-acceptor pairs. The time
evolution of the emission signal during electron beam irradiation supports the
association of the red emission with charged centres.