MIJ-NSR Vol. 5S1, Art. W8.1, M. J. Jurkovic et al.

High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy Using a Thin Low-Temperature AlN Layer

M. J. Jurkovic, L. K. Li, B. Turk, W. I. Wang
Department of Electrical Engineering, Columbia University

S. Syed, D. Simonian, H. L. Stormer
Department of Physics, Columbia University

This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm²/Vs with carrier sheet densities of 6.1 x 10¹² cm^-2 , 6.0 x 10¹² cm^-2 , and 5.8 x 10¹² cm^-2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W8.1 (2000).

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