This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

Large (up to 10mm diameter) aluminum nitride (AlN) boules have been grown by the sublimation-recondensation method to study the preparation of high-quality single crystal substrates. The growth mechanism of the boules has been studied using AFM. It has been determined that large single crystal grains in those boules grow with a density of screw dislocations below 5x10⁴ cm^-3 while edge dislocations are at lower density (none were observed). High-quality AlN single crystal substrates for epitaxial growth have been prepared and characterized using Chemical Mechanical Polishing (CMP) and AFM imaging, respectively. Also, the differential etching effect of KOH solutions on the N and Al-terminated faces of AlN on vicinal c-faces has been investigated. In order to identify the N or Al-terminated face, convergent beam electron diffraction has been used.

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References Citing this Article

[1] Lianghong Liu, B. Liu, Y. Shi, J.H. Edgar, MRS Internet J. Nitride Semicond. Res. 6, 7 (2001).

[2] D. Zhuang, J.H. Edgar, Lianghong Liu, B. Liu, L. Walker, MRS Internet J. Nitride Semicond. Res. 7, 4 (2002).

Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W6.7 (2000).

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