last updated Wednesday, May 17, 2000 4:56:35 PM.
© 2000 The Materials Research Society
Vitaly A. Sukhoveyev
Crystal Growth Research Center
Vladimir A. Ivantsov
TDI, Inc.
Irina P. Nikitina, Alexandr I. Babanin
Ioffe Institute
A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, M. G. Mil'vidskii
Institute of Rare Metals
Vladimir Dmitriev
TDI, Inc.
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
In this paper, we describe the seeded growth of ~20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown from Ga-based melt in the temperature range of 800-1000 °C at less than 2 atm ambient pressure. Growth was performed at ~2 mm/hr growth rate. X-ray diffraction revealed polycrystalline structure of the ingots. Homoepitaxial GaN layers were deposited by HVPE technique on the substrates, which were fabricated from the grown GaN ingots.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W6.6 (2000).
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