A. R.A. Zauner, J. J. Schermer, W. J.P. van Enckevort, V. Kirilyuk, J. L. Weyher
University of Nijmegen
I. Grzegory
High Pressure Research Center
P. R. Hageman, P. K. Larsen
University of Nijmegen
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
The N-side of GaN single crystals with off-angle orientations of 0°, 2°, and 4°
towards the [10
0] direction was used as a substrate for homo-epitaxial MOCVD
growth. The highest misorientation resulted in a reduction of the density of grown hillocks
by almost two orders of magnitude as compared with homo-epitaxial films grown on the
exact (000) surface. The features still found on the 4° misoriented sample after growth
can be explained by a model involving the interaction of steps, introduced by the
misorientation and the hexagonal hillocks during the growth process.
Full text of this article is available.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W6.3 (2000).
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