last updated Wednesday, May 17, 2000 4:56:18 PM.
© 2000 The Materials Research Society
Jung Han, Jeffrey Figiel, Gary Petersen, Samuel Myers, Mary Crawford, Michael Banas, Sean Hearne
Sandia National Laboratories
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W6.2 (2000).
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