last updated Wednesday, May 17, 2000 4:56:07 PM.
© 2000 The Materials Research Society
Mourad Benamara, zuzanna Liliental-Weber, J. H. Mazur, W. Swider, J. Washburn
Materials Science Division, Lawrence Berkeley National Laboratory
M. Iwaya, I. Akasaki, H. Amano
Meijo University, Dept. of Electrical and Electronic Engineering
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Successive growth of thick GaN layers separated by either LT-GaN or LT-AlN interlayers have been investigated by transmission electron microscopy techniques. One of the objectives of this growth method was to improve the quality of GaN layers by reducing the dislocation density at the intermediate buffer layers that act as barriers to dislocation propagation. While the use of LT-AlN results in the multiplication of dislocations in the subsequent GaN layers, the LT-GaN reduces dislocation density. Based upon Burgers vector analysis, the efficiency of the buffer layers for the propagation of the different type of dislocations is presented. LT-AlN layer favor the generation of edge dislocations, leading to a highly defective GaN layer. On the other hand, the use of LT-GaN as intermediate buffer layers appears as a promising method to obtain high quality GaN layer.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W5.8 (2000).
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