Wendy Lynn Sarney, Lourdes Salamanca-Riba
University of Maryland
Tim Hossain, P. Zhou, H N Jayatirtha
Howard University
Hyoung Ho Kang, R. D. Vispute
University of Maryland
Michael Spencer
Howard University
Ken Jones
US Army Research Laboratory
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
We are attempting to grow bulk AlN that would be suitable as a substrate for nitride film growth. Bulk AlN films were grown by physical vapor transport on 3.5° off-axis and on-axis 6H SiC seed crystals and characterized by TEM, x-ray-diffraction, Auger electron microscopy, and SEM. TEM images show that the bulk AlN does not have the columnar structure typically seen in AlN films grown by MOCVD. Although further optimization is required before the bulk AlN is suitable as a substrate, we find that the structural characteristics achieved thus far indicate that quality bulk AlN substrates may be obtained in the future.
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[1] Lianghong Liu, B. Liu, Y. Shi, J.H. Edgar, MRS Internet J. Nitride Semicond. Res. 6, 7 (2001).
Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W5.5 (2000).
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