0).
Carol Trager-Cowan, D McColl, F Sweeney, S T F Grimson, J-F Treguer, A Mohammed, P G Middleton, S K Manson-Smith, K P O'Donnell
University of Strathclyde
W Van der Stricht, I Moerman, P Demeester
University of Ghent
M F Wu, A Vantomme
KULeuven
D Zubia, S D Hersee
University of New Mexico
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
In this paper we illustrate the application of electron beam techniques to the
measurement of strain, defect and alloy concentrations in nitride thin films. We present
brief comparative studies of CL spectra of AlGaN and InGaN epilayers and EBSD
patterns obtained from two silicon-doped 3 µm thick GaN epilayers grown on an on-axis
(0001) sapphire substrate and a sapphire substrate misoriented by 10° toward the m-plane
(100).
Full text of this article is available.
For information about using Adobe Acrobat files, click here .
Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W5.10 (2000).
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