last updated Wednesday, May 17, 2000 4:55:50 PM.
© 2000 The Materials Research Society
Lei Zhang
Sandia National Laboratories
Luke F. Lester
University of New Mexico
Albert G. Baca, Randy J. Shul, Ping C. Chang, Christi G. Willison
Sandia National Laboratories
Umesh K. Mishra, Steve P. Denbaars
University of California, Santa Barbara
John C. Zolper
Office of Naval Research
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Junction field effect transistors (JFET) were fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition. The DC and microwave characteristics, as well as the high temperature performance of the devices were studied. These devices exhibited excellent pinch-off and a breakdown voltage that agreed with theoretical predictions. An extrinsic transconductance (gm) of 48 mS/mm was obtained with a maximum drain current (ID) of 270 mA/mm. The microwave measurement showed an fT of 6 GHz and an fmax of 12 GHz. Both the ID and the gm were found to decrease with increasing temperature, possibly due to lower electron mobility at elevated temperatures. These JFETs exhibited a significant current reduction after a high drain bias was applied, which was attributed to a partially depleted channel caused by trapped electrons in the semi-insulating GaN buffer layer.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W4.9 (2000).
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