This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

High-quality GaN was grown using gas-source molecular-beam epitaxy (GSMBE). The mobility of undoped GaN was 350 cm² /Vsec and the carrier concentration was 6x10¹⁶ cm^-3 at room temperature. A GaN metal semiconductor field-effect transistor (MESFET) and an n-p-n GaN bipolar junction transistor (BJT) were fabricated for high-temperature operation. The high-temperature reliability of the GaN MESFET was also investigated. That is, the lifetime of the FET at 673 K was examined by continuous current injection at 673 K. We confirmed that the FET performance did not change at 673 K for over 1010 h. The aging performance of the BJT at 573 K was examined during continuous current injection at 573 K for over 850 h. The BJT performance did not change at 573 K. The current gain was about 10. No degradation of the metal-semiconductor interface was observed by secondary ion-mass spectrometry (SIMS) and transmission electron microscopy (TEM). It was also confirmed by using Si-ion implantation that the contact resistivity of the GaN surface and electrode materials could be lowered to 7x10^-6 ohm-cm² .

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W4.8 (2000).

last updated Wednesday, May 17, 2000 4:55:44 PM.
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