last updated Thursday, May 18, 2000 10:50:31 AM.
© 2000 The Materials Research Society
Ichiro Yonenaga, Tetsuya Hoshi
Institute for Materials Reserach, Tohoku University
Akira Usui
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
The hardness of single crystal GaN (gallium nitride) at elevated temperature is measured for the first time and compared with other materials. A Vickers indentation method was used to determine the hardness of crack-free GaN samples under an applied load of 0.5N in the temperature range 20 - 1200°C. The hardness is 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures GaN shows higher hardness than Si and GaAs. A high mechanical stability for GaN at high temperature is deduced.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.90 (2000).
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