MIJ-NSR Vol. 5S1, Art. W3.89, Doru I Florescu et al.

Doping Dependence of the Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Using a Scanning Thermal Microscope

Doru I Florescu, V A Asnin, L G Mourokh, Fred H Pollak
Brooklyn College of CUNY

R J Molnar
Massachusetts Institute of Technology, Lincoln Laboratory

This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

We have measured the doping concentration dependence of the room temperature thermal conductivity ( ) of two series of n-GaN/sapphire (0001) fabricated by hydride vapor phase epitaxy (HVPE). In both sets decreased linearly with log n, the variation being about a factor two decrease in for every decade increase in n. 1.95 W/cm-K was obtained for one of the most lightly doped samples (n = 6.9x10¹⁶cm^-3), higher than the previously reported 1.7-1.8 W/cm-K on lateral epitaxial overgrown material [V.A. Asnin et al, Appl. Phys. Lett. 75, 1240 (1999)] and 1.3 W/cm-K on a thick HVPE sample [E.K. Sichel and J.I. Pankove, J. Phys. Chem. Solids 38, 330 (1977)]. The decrease in the lattice component of due to increased phonon scattering from both the impurities and free electrons outweighs the increase in the electronic contribution to .

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.89 (2000).

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