This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

Mg-doped superlattices consisting of uniformly doped Al_xGa_1-xN and GaN layers are analyzed by Hall-effect measurements. Acceptor activation energies of 70 meV and 58 meV are obtained for superlattice structures with an Al mole fraction of x = 0.10 and 0.20 in the barrier layers, respectively. These energies are significantly lower than the activation energy measured for Mg-doped GaN thin films. At room temperature, the doped superlattices have free hole concentrations of 2 x 10¹⁸ cm^-3 and 4 x 10¹⁸ cm ^-3 for x = 0.10 and 0.20, respectively. The increase in hole concentration with Al content of the superlattice is consistent with theory. The room temperature conductivity measured for the superlattice structures are 0.27 S/cm and 0.64 S/cm for an Al mole fraction of x = 0.10 and 0.20, respectively.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.85 (2000).

last updated Wednesday, May 17, 2000 4:55:12 PM.
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