last updated Wednesday, May 17, 2000 4:55:07 PM.
© 2000 The Materials Research Society
Ki Soo Kim, Chang Seok Oh, Myung Soo Han, Chi Sun Kim, Gye Mo Yang, Jeon Wook Yang, Chang-Hee Hong, Chang Joo Youn, Kee Young Lim, Hyung Jae Lee
Chonbuk National University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
We investigated the doping characteristics of Mg doped, Mg-Si co-doped, and Mg-Zn co-doped GaN films grown by metalorganic chemical vapor deposition. We have grown p-GaN film with a resistivity of 1.26 cm and a hole density of 4.3 1017 cm-3 by means of Mg-Si co-doping technique. The Mg-Si co-doping characteristic was also explained effectively by taking advantage of the concept of competitive adsorption between Mg and Si during the growth. For Mg-Zn co-doping, p-GaN showing a low electrical resistivity (0.7 cm) and a high hole concentration (8.5 1017 cm-3 ) was successfully grown without the degradation of structural quality of the film. Besides, the measured specific contact resistance for Mg-Zn co-doped GaN film is 5.0 10-4 cm2, which is lower value by one order of magnitude than that for only Mg doped GaN film (1.9 10-3 cm2).
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.84 (2000).
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