last updated Wednesday, May 17, 2000 4:55:01 PM.
© 2000 The Materials Research Society
Yuejun Sun, Leng Seow Tan, Soo-jin Chua, Savarimuthu Prakash
National University of Singapore
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
For the first time, p-type doping through beryllium implantation in gallium nitride was achieved by using a new annealing process, in which the sample was first annealed in forming gas (12% H2 and 88% N2), followed by annealing in pure nitrogen. Variable temperature Hall measurements showed that sheet hole concentrations of the annealed samples were about 1x1013 cm-2 with low hole mobilities. An ionization energy of 127 meV was estimated with a corresponding activation efficiency of ~100%. SIMS results revealed a relationship between the enhanced diffusion of Be and activation of the acceptors.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.82 (2000).
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