1011 cm-2 ) in c-GaN:Si on the electrical properties is reflected
in the dependence of the electron mobility on the free carrier concentration. We find
that dislocations in cubic GaN act as acceptors and are electrically active.
Donat Josef As, Andreas Richter, Joerg Busch, Bernd Schoettker, Martin Luebbers, Juergen Mimkes, Detlef Schikora, Klaus Lischka
Universitaet Paderborn
Wilhelm Kriegseis, Wilhelm Burkhardt, Bruno K. Meyer
Universitaet Giessen
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Si-doping of cubic GaN epilayers grown by an rf plasma-assisted molecular beam
epitaxy on semi-insulating GaAs (001) substrates is investigated by secondary ion
mass spectroscopy (SIMS), photoluminescence (PL) and by Hall-effect measure-ments.
SIMS measurements show a homogeneous incorporation of Si in cubic GaN
epilayers up to concentrations of 5*1019 cm-3 . PL shows a clear shift of the donor-acceptor
emission to higher energies with increasing Si-doping. Above a Si-flux of
1*1011 cm-2 s-1 the near band edge lines merge to one broad band due to band gap
renormalization and conduction band filling effects. The influence of the high
dislocation density (1011 cm-2 ) in c-GaN:Si on the electrical properties is reflected
in the dependence of the electron mobility on the free carrier concentration. We find
that dislocations in cubic GaN act as acceptors and are electrically active.
Full text of this article is available.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.81 (2000).
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