= 0.3-0.4 was
determined from Hall effect measurements. The formation energy of ON of E F = 1.3 eV, determined
from the experimental data, is lower than the theoretically predicted value.
R. Y. Korotkov, B. W. Wessels
Northwestern University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron
concentration increased as the square root of the oxygen partial pressure. Oxygen is a shallow
donor with a thermal ionization energy of 27 ±2 meV. A compensation ratio of = 0.3-0.4 was
determined from Hall effect measurements. The formation energy of ON of E F = 1.3 eV, determined
from the experimental data, is lower than the theoretically predicted value.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.80 (2000).
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