0) IDB and the (10
0)
SMB and consequently alter the electronic structure of these boundaries.
James Chisholm, Paul D Bristowe
Department of Materials Science and Metallurgy, Cambridge University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
We report on the interaction of native point defects with commonly observed planar
defects in GaN. Using a pair potential model we find a positive binding energy for all
native defects to the three boundary structures investigated indicating a preference for
native defects to form in these interfaces. The binding energy is highest for the Ga
interstitial and lowest for vacancies. Interstitials, which are not thought to occur in
significant concentrations in bulk GaN, should form in the (110) IDB and the (100)
SMB and consequently alter the electronic structure of these boundaries.
Full text of this article is available.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.72 (2000).
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