Randall M Feenstra
Carnegie Mellon University
John E. Northrup
Xerox Palo Alto Research Center
David W. Greve
Carnegie Mellon University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Exposure of wurtzite GaN films grown on Si-polar 6H-SiC(0001) to magnesium dur-ing molecular beam epitaxy (MBE) has been studied. In the nitrogen rich regime of MBE growth, GaN films are known to grow with rough morphology. We observe on GaN(0001) that small doses of Mg act as a surfactant, smoothing out this roughness. An interpretation of this surfactant behavior is given in terms of electron counting arguments for the surface reconstructions. Previously, we have reported that larger doses of Mg lead to inversion of the Ga-polar GaN film to produce N-polar GaN. Several Mg-related reconstructions of the resulting GaN(000 ) surface are reported.
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[1] R. M. Feenstra, J. E. Northrup, Jörg Neugebauer, MRS Internet J. Nitride Semicond. Res. 7, 3 (2002).
Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.65 (2000).
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