Formation and Stability of the Prismatic Stacking Fault in Wurtzite (Al,Ga,In) Nitrides
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Abstract
The formation of the {1
10} stacking fault, which has two atomic
configurations in wurtzite (Ga,Al,In)N, has been investigated by high resolution
electron microscopy and energetic calculations. It originates from steps at the SiC
surface and it can form on a flat (0001) sapphire surface. A modified Stillinger-Weber
potential was used in order to investigate the relative stability of the two atomic
configurations. They have comparable energy in AlN, whereas the
1/2<10
1>{110} configuration is more stable in GaN and InN. In GaN layers,
only the 1/2<101>{110} configuration was observed. The 1/6<203>
configuration was found in small areas inside the AlN buffer layer where it folded
rapidly to the basal plane, and when back into the prismatic plane, it took the
1/2<101>{110} atomic configuration.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.55 (2000).
last updated Wednesday, May 17, 2000 4:54:24 PM.
© 2000 The Materials Research Society