last updated Wednesday, May 17, 2000 4:54:09 PM.
© 2000 The Materials Research Society
Z. Chen, R. Zhang, J. Zhu, B. Shen, Y. Zhou, P. Chen, W. Li, Y. Shi, S. Gu, Y. D. Zheng
Nanjing University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Transmission electron microscopy (TEM), x-ray diffraction (XRD), photoluminescence (PL) and Raman scattering measurements were applied to study the correlation between the microstructure and physical properties of the GaN films grown by light radiation heating metalorganic chemical vapor deposition (LRH-MOCVD), using GaN buffer layer on sapphire substrates. When the density of the threading dislocation (TD) increases about one order of magnitude, the yellow luminescence (YL) intensity is strengthened from negligible to two orders of magnitude higher than the band edge emission intensity. The full width of half maximum (FWHM) of the GaN (0002) peak of the XRD rocking curve was widened from 11 min to 15 min, and in Raman spectra, the width of E2 mode is broadened from 5 cm-1 to 7 cm-1. A "zippers" structure at the interface of GaN/sapphire was observed by high-resolution electron microscope (HREM). Furthermore the origins of TD and relationship between physical properties and microstructures combining the growth conditions are discussed.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.50 (2000).
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