last updated Friday, July 14, 2000 1:06:53 PM.
© 2000 The Materials Research Society
Wendy Lynn Sarney, Lourdes Salamanca-Riba
University of Maryland
Vidhya Ramachandran, Randall Feenstra, D. W. Greve
Carnegie Mellon University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
GaN films grown on SiC (0001) by MBE at various substrate temperatures (600° -750° C) were characterized by RHEED, STM, x-ray diffraction, AFM and TEM. This work focuses on the TEM analysis of the films" features, such as stacking faults and dislocations, which are related to the substrate temperature. There are several basal plane stacking faults in the form of cubic inclusions for samples grown at low temperatures compared to those grown at high temperatures. The dislocation density is greatest for the film grown at 600°C, and it steadily decreases with increasing growth temperatures. Despite the presence of various defects, x-ray analysis shows that the GaN films are of high quality. The double crystal rocking curve full width at half maximum (FWHM) for the GaN (0002) peak is less than 2 arc-minutes for all of the films we measured and it decreases with increasing growth temperature.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.47 (2000).
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