last updated Wednesday, May 17, 2000 4:53:59 PM.
© 2000 The Materials Research Society
Torsten K. Schmidtling, M. Klein, U. W. Pohl, W. Richter
Technische Universitaet Berlin
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
GaAsN epilayers and quantum wells with a good structural quality and surface morphology were grown by low pressure metal organic vapor phase epitaxy using tertiarybutylhydrazine as a novel nitrogen source. The dependence of nitrogen incorporation on growth temperature was studied for epitaxy with arsine and tertiarybutylarsine precursors. A nitrogen content of 6.7 % was achieved using tertiarybutylhydrazine and tertiarybutylarsine at a low growth temperature of 530 °C. The observed room temperature luminescence shows an increasing redshift with increasing nitrogen contents of the wells.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.43 (2000).
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