This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

The hexagonal domain suppression-effects in cubic-GaNAs grown by metalorganic chemical-vapor deposition (MOCVD) is reported. A thin buffer layer (20 nm) was first grown on a substrate at 853 K using trimethylgallium and dimethylhydrazine (DMHy), and GaNAs samples were grown at different AsH 3 flow rates (0 ~ 450 µmol/min) at 1193 K. As a result, three types of surface morphologies were obtained: the first was a smooth surface (AsH 3 = 0 µmol/min); the second was a mirrorlike surface having small and isotropic grains (AsH 3 : 45 ~ 225 µmol/min ); and the third involved three-dimensional surface morphologies (above 450 µmol/min of AsH 3 flow rate). Furthermore, it was confirmed using X-ray diffraction that the mixing ratio of hexagonal GaNAs in cubic GaNAs decreased with an increase of the AsH 3 flow rate. We could obtain GaNAs having a cubic component of above 85% at AsH 3 flow rates above 20 µmol/min. Therefore, the MOCVD growth method using AsH 3 and DMHy was mostly effective for suppressing hexagonal GaNAs. It was observed that the photoluminescence intensity of GaNAs was decreased with increase of arsine flow rate.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.41 (2000).

last updated Wednesday, May 17, 2000 4:53:54 PM.
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