last updated Wednesday, May 17, 2000 4:53:49 PM.
© 2000 The Materials Research Society
J.R.L. Fernandez
Instituto de Fisica da USP
V.A. Chitta
Universidade Sao Fransisco
Eduardo Abramof, A. Ferreira da Silva
Intituto Nacional de Pesquisas Espaciais
J.R. Leite, A. Tabata
Instituto de Fisica da USP
D.J. As, T. Frey, D. Schikora, K. Lischka
Universitaet Paderborn
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.40 (2000).
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