last updated Wednesday, May 17, 2000 4:53:43 PM.
© 2000 The Materials Research Society
Otto Zsebök, Jan V Thordson, Qingxiang Zhao, Ulf Södervall, Lars Ilver, Thorvald G Andersson
Chalmers University of Technology
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
We have grown GaN, with addition of a 0.10 to 0.33 % Al, on sapphire(0001) substrates by solid-source RF-plasma assisted MBE. The Al-concentration was determined by secondary ion-mass spectrometry and Auger-electron spectroscopy, while the layer quality was assessed by photoluminescence and high-resolution scanning electron microscopy. Microscopy revealed a meandering pattern and a surface roughness varying with Al-content. The smallest surface roughness was obtained at 0.10 % Al. Photoluminescence revealed two main peaks attributed to the neutral donor-bound exciton. Its energy increased slightly with Al-concentration, which established a correlation between the Al-concentration and the band gap.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.36 (2000).
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