-GaN than on the 
-GaN, where N is more tightly bonded. The effect of
Si is by far less pronounced, probably because it is more easily incorporated than Mg,
and its effect on the surface kinetics is then strongly reduced.
Guido Mula
Università di Cagliari (Italy)
Bruno Daudin, Christoph Adelmann
CEA-Grenoble (France)
Philippe Peyla
Université J. Fourier, Grenoble (France)
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
We present here a description and an analysis of the modifications in the growth
behaviour of GaN induced by the presence of foreign species. The particular cases of Mg
and Si are analysed. Profound changes, both in microscopic and macroscopic scales,
occur in presence of Mg, even for fluxes of about 1/1000th of the Ga flux. The growth
rate can be increased by almost 50%, depending of the III/V ratio and on the amount of
Mg. A theoretical model is proposed to describe the observed effect. It is found that Mg
induces changes in the Ga and N diffusion barriers and acts as a surfactant. The effect is
stronger on the -GaN than on the -GaN, where N is more tightly bonded. The effect of
Si is by far less pronounced, probably because it is more easily incorporated than Mg,
and its effect on the surface kinetics is then strongly reduced.
Full text of this article is available.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.35 (2000).
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