last updated Wednesday, May 17, 2000 4:53:33 PM.
© 2000 The Materials Research Society
A. J. Ptak, K. S. Ziemer, L. J. Holbert, C. D. Stinespring, Thomas H Myers
West Virginia University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Evidence is presented that nitrogen plasma sources utilizing a pyrolytic boron nitride liner may be a significant source of B contamination during growth and processing. Auger electron spectroscopy analysis performed during nitridation of sapphire indicate the resulting layers contain a significant amount of BN. The formation of Al1-xBxN would explain the observation of a lattice constant several percent smaller than AlN as measured by reflection high-energy electron diffraction. The presence of cubic inclusions in layers grown on such a surface may be related to the segregation of BN during the nitridation into its cubic phase.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.33 (2000).
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