last updated Wednesday, May 17, 2000 4:53:22 PM.
© 2000 The Materials Research Society
W.-L. Chen, R. L. Gunshor
Purdue University
Jung Han
Sandia National Laboratories
K. Higashimine, N. Otsuka
Japan Advanced Institute of Science and Technology
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.30 (2000).
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