00> zone. Simulation was done by many-beam solution with 33 zero-order beams.
The comparison of experimental CBED patterns and simulated patterns indicates that the
polarity of GaN on Si(111) is Ga face.
Lijie Zhao, Hughes Marchand, Paul Fini, Steven Denbaars, Umesh Mishra, Jim Speck
University of California, Santa Barbara
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
The polarity of laterally epitaxially overgrown (LEO) GaN on Si(111) with an AlN
buffer layer grown by MOCVD has been studied by convergent beam electron diffraction
(CBED). The LEO GaN was studied by cross-section and plan-view transmission
electron microscopy (TEM). The threading dislocation density is less than 108 cm-2 and
no inversion domains were observed. CBED patterns were obtained at 200 kV for the
<100> zone. Simulation was done by many-beam solution with 33 zero-order beams.
The comparison of experimental CBED patterns and simulated patterns indicates that the
polarity of GaN on Si(111) is Ga face.
Full text of this article is available.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.3 (2000).
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