last updated Wednesday, May 17, 2000 4:53:17 PM.
© 2000 The Materials Research Society
Maohai Xie, Sean M. Seutter, Lianxi Zheng, Sauha Cheung, YeeFai Ng, Huasheng Wu, Shuk Yin Tong
The Univ. of Hong Kong
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
The surface morphology of GaN films grown by molecular beam epitaxy (MBE) is investigated by scanning tunneling microscopy (STM). A comparison is made between flat and vicinal surfaces. The wurtzite structure of GaN leads to special morphological features such as step pairing and triangularly shaped islands. Spiral mounds due to growth at screw threading dislocations are dominant on flat surfaces, whereas for vicinal GaN, the surfaces show no spiral mound but evenly spaced steps. This observation suggests an effective suppression of screw threading dislocations in the vicinal films. This finding is confirmed by transmission electron microscopy (TEM) studies. Continued growth of the vicinal surface leads to step bunching that is attributed to the effect of electromigration.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.29 (2000).
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