This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

Laterally resolved high resolution X-ray diffraction (HRXRD) and photoluminescence spectroscopy (PL) have been used to assess In incorporation efficiency in In_xGa_1-xN/GaN heterostructures grown through rf-plasma-assisted molecular beam epitaxy. Average alloy composition over a set of In_xGa_1-xN/GaN superlattices has been found to depend systematically upon both substrate temperature (T_sub) and V/III flux ratio during growth. A pronounced thermally activated In loss (with more than an order-of- magnitude decrease in average alloy composition) is observed over a narrow temperature range (590--670 °C ), with V/III flux ratio fixed. Additionally, the V/III flux ratio is observed to further strongly affect In incorporation efficiency for samples grown at high T_sub, with up to an order-of-magnitude enhancement in In content despite only a minor increase in V/III flux ratio. PL spectra reveal redshifts as In content is increased and luminescence efficiency which degrades rapidly with decreasing T_sub. Results are consistent with In loss arising from thermally activated surface segregation + surface desorption processes during growth.

Full text of this article is available.

• Portable Document Format (Adobe Acrobat) Version (77K)

For information about using Adobe Acrobat files, click here .

Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.27 (2000).

last updated Wednesday, May 17, 2000 4:53:12 PM.
© 2000 The Materials Research Society