Meghan L Caldwell, Hugh H Richardson, M. E. Kordesch
Ohio University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
An aluminum nitride (AlN) film deposited on silicon (100) was used as the
substrate for growing manganese (Mn) doped AlN film by metal organic chemical vapor
deposition (MOVCD). The (15.78 µm) under layer of AlN was grown at 615 °C at a
pressure of 10-4 Torr. The (2.1 µm) top layer of Mn-AlN was grown at the same
temperature and pressure but doped with pulse valve introduction of the manganese
decacarbonyl (100 ms on, 100 ms off). The film was then characterized ex situ with IR
reflectance microscopy, X-ray diffraction, scanning electron microscopy imaging,
cathodoluminescence, and X-ray fluorescence. The IR reflectance measurements showed a
strong (A1) LO mode for AlN at 920 cm-1 and 900 cm-1 with a shoulder at 849 cm-1 . X-ray
Diffraction yielded three diffraction peaks at a 2
position of 33, 36 and 38 degrees
corresponding to 100, 002, and 101 lattice planes respectively. Cathodoluminescence
results show strong visible emitted light from incorporated manganese. The relative
percentage of manganese to aluminum was below the detection limit (0.01 %) of the X-ray
fluorescence spectrometer. Amorphous Mn doped AlN films have also been grown
using a low temperature atomically abrupt sputter epitaxial system. The amorphous Mn
doped AlN showed no cathodoluminescence.
Full text of this article is available.
For information about using Adobe Acrobat files, click here .
Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.26 (2000).
|
|
|
Reference List Building For information on building reference lists, see About the MIJ-NSR Reference List Builder |
