This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

We report the growth kinetics of GaN thin films using the single source precursor bisazido dimethylaminopropyl gallium (BAZIGA) in a cold wall reactor. Transparent, smooth, epitaxial (FWHM of the -GaN 0002 rocking curve = 129.6 arcsec) and stoichi-ometric GaN films were grown on c-plane Al₂O₃ substrates in the temperature range of 870 -- 1320K and high growth rates were obtained (up to 4000 nm/hr). Film growth was studied as a function of substrate temperature as well as reactor pressure. Although high quality films were obtained without using any additional source of nitrogen such as am-monia, we have investigated the effect of ammonia on the growth and properties of the resulting films. The films obtained were characterized by XRD, RBS, XPS, AES, AFM, SEM and the room temperature PL spectroscopy of GaN films grown exhibited the cor-rect near band edge luminescence at 3.45 eV.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.18 (2000).

last updated Wednesday, May 17, 2000 4:53:01 PM.
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