Hong Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, H. J. Lozykowski
Ohio University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Erbium-doped films were grown on sapphire and silicon substrates by reactive sputtering, with different Er concentrations in the film. GaN films deposited at 800 K were determined to be polycrystalline by x-ray diffraction analysis, and retained their polycrystalline structure after annealing in nitrogen at 1250 K. The Er-doped films showed optical transmission beginning at about 360 nm, and the Er dose and film purity were determined with Rutherford backscattering spectroscopy. Photoluminescence and cathodoluminescence spectroscopy showed sharp emission lines corresponding to Er3+ intra 4fn shell transitions over the range from 9 - 300 K. At above-bandgap optical and electron excitation, the 4S3/2 and 4F9/2 transition dominate, and are superposed on the "yellow band" emission. The infrared emission line at 1543 nm, corresponding to the Er 4I13/2 to 4I5/2 transition is also observed.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.16 (2000).
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