MIJ-NSR Vol. 5S1, Art. W3.15, S. Gu et al.

The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GaN

S. Gu
University of Wisconsin

Rong Zhang
Nanjing University

Jingxi Sun, Ling Zhang, Thomas F. Kuech
University of Wisconsin

This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3

Abstract

The nature and impact of ZnO buffer layers on the initial stages of the hydride vapor phase epitaxy (HVPE) of GaN have been studied by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), x-ray diffraction (XRD) and photoluminescence (PL). During pre-growth heating, the surface ZnO layer was found to both desorb from ZnO-coated sapphire and react with the underlying sapphire surface forming a thin ZnAl₂O₄ alloy layer between ZnO and sapphire surface. This ZnO-derived surface promotes the initial nucleation of the GaN and markedly improves material surface morphology, quality and growth reproducibility.

Full text of this article is available.

Portable Document Format (Adobe Acrobat) Version (102K)

For information about using Adobe Acrobat files, click here .

Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.15 (2000).

Reference List Building

For information on building reference lists, see About the MIJ-NSR Reference List Builder