Tanya Milkova Paskova, S. Tungasmita, E Valcheva, E. Svedberg
Linköping University
B. Arnaudov, S. Evtimova
Sofia University
P. Persson, A. Henry
Linköping University
R. Beccard, M. Heuken
Aixtron
B. Monemar
Linköping University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
We report on an improved quality of thick HVPE-GaN grown on MOCVD-GaN "template" layers compared to the material grown directly on sapphire. The film-substrate interface revealed by cathodoluminescence measurements shows an absence of highly doped columnar structures which are typically present in thick HVPE-GaN films grown directly on sapphire. This improved structure results in a reduction of two orders of magnitude of the free carrier concentration from Hall measurements. It was found that the structure, morphology, electrical and optical properties of homoepitaxial thick GaN layers grown by HVPE were strongly influenced by the properties of the MOCVD-GaN "template". Additionally the effect of Si doping of the GaN buffer layers on the HVPE-GaN properties was analysed.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.14 (2000).
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