last updated Wednesday, May 17, 2000 4:52:35 PM.
© 2000 The Materials Research Society
Andrei V Osinsky, V. N. Fuflyigin, F. Wang, P. I. Vakhutinsky, P. E. Norris
NZ Applied Technologies
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Recent advances in the processing of complex-oxide materials has allowed us to monolithically grow ferroelectrics of lead lanthanum zirconate titanate (PLZT) and barium strontium titanate (BST) systems on a GaN/sapphire structure. High quality films of PLZT and BST were grown on GaN/c-Al2O3in a thickness range of 0.3-5 µm by a sol-gel technique. Field-induced birefringence, as large as 0.02, was measured from a PLZT layer grown on a buffered GaN/sapphire structure. UV illumination was found to result in more symmetrical electrooptic hysteresis loop. BST films on GaN demonstrated a low frequency dielectric constant of up to 800 with leakage current density as low as 5.5->10-8 A/cm2.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W3.12 (2000).
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