last updated Wednesday, May 17, 2000 4:52:14 PM.
© 2000 The Materials Research Society
Shugo Nitta, Takayuki Kashima, Michihiko Kariya, Yohei Yukawa, Shigeo Yamaguchi, Hiroshi Amano, Isamu Akasaki
Meijo University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
The behavior of threading dislocations during mass transport of GaN was investigated in detail by transmission electron microscopy. Mass transport occurred at the surface. Therefore, growing species are supplied from the in-plane direction. The behavior of threading dislocations was found to be strongly affected by the mass transport process as well as the high crystallographic anisotropy of the surface energy of the facets particular to GaN.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W2.8 (2000).
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