last updated Thursday, May 18, 2000 10:50:26 AM.
© 2000 The Materials Research Society
Thomas Gehrke
North Carolina State University
Kevin J. Linthicum, Pradeep Rajagopal
Nitronex Corporation
Edward A. Preble, Robert F. Davis
North Carolina State University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
Growth of GaN and AlxGa1-xN thin films on 6H-SiC(0001) and Si(111) substrates with low densities of defects using the PENDEO. process and the characterization of the resulting materials are reported. The application of a mask on the GaN seed structures hinders the vertical propagation of threading dislocations of the seed material during regrowth, but introduces a misregistry in the overgrowing material resulting in low quality crystal growth. This misregistry has been eliminated due to advanced processing and the exclusion of the masking layer. The new generation of samples do not show any misregistry, as shown by transmission electron microscopy.
Full text of this article is available.
For information about using Adobe Acrobat files, click here .
Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W2.4 (2000).
|
|
|
Reference List Building For information on building reference lists, see About the MIJ-NSR Reference List Builder |