last updated Wednesday, May 17, 2000 4:51:53 PM.
© 2000 The Materials Research Society
Hideto Miyake, Motoo Yamaguchi, Masahiro Haino, Atsushi Motogaito, Kazumasa Hiramatsu
Mie University
Shingo Nambu, Yasutoshi Kawaguchi, Nobuhiko Sawaki
Nagoya University
Yasushi Iyechika, Takayoshi Maeda
Sumitomo Chemical Co. Ltd.
Isamu Akasaki
Meijo University
This article was presented as part of Symposium W, "Gallium Nitride and Related Alloys" at the 1999 Fall Meeting of the Materials Research Society held in Boston, Massachusetts, November 28-December 3
A buried tungsten (W) mask structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window region vs. the mask region is good. An underlying GaN with a striped W metal mask is easily decomposed above 500 °C by the W catalytic effect, by which radical hydrogen is reacted with GaN. It is difficult to bury the W mask because severe damage occurs in the GaN epilayer under the mask. It is found that an underlying AlGaN/GaN layer with a narrow W stripe mask width (mask/window = 2/2 µm) leads the ELO GaN layer to be free from damage, resulting in an excellent W-buried structure.
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 5S1, W2.3 (2000).
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